The Industry Demonstration Session (IDS) featured live demonstrations of selected ICs that were also presented by industry authors in regular paper sessions. The IDS is intended to exemplify the real-life applications made possible by new ICs presented at ISSCC.
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3.1 A 22nm IA Multi-CPU and GPU System-on-Chip
S. Damaraju1, V. George1, S. Jahagirdar1, T. Khondker1, R. Milstrey1, S. Sarkar1, S. Siers1, I. Stolero2, A. Subbiah1
1 Intel, Folsom, CA
2 Intel, Haifa, Israel
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3.6 A 280mV-to-1.2V Wide-Operating-Range IA-32 Processor in 32nm CMOS
S. Jain1, S. Khare1, S. Yada1, A. V1, P. Salihundam1, S. Ramani1, S. Muthukumar1, S. M1, A. Kumar1, S. Gb1, R. Ramanarayanan1, V. Erraguntla1, J. Howard2, S. Vangal2, S. Dighe2, G. Ruhl2, P. Aseron2, H. Wilson2, N. Borkar2, V. De2, S. Borkar2
1 Intel, Bangalore, India
2 Intel, Hillsboro, OR
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5.1 An 8Ω 2.5W 1%-THD 104dB(A)-Dynamic-Range Class-D Audio Amplifier with an Ultra-Low EMI System and Current Sensing for Speaker Protection
A. Nagari, E. Allier, F. Amiard, V. Binet, C. Fraisse
ST-Ericsson, Grenoble, France
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5.8 A 330nA Energy-Harvesting Charger with Battery Management for Solar and Thermoelectric Energy Harvesting
K. Kadirvel1, Y. Ramadass2, U. Lyles1, J. Carpenter1, A. Chandrakasan3, B. Lum-Shue-Chan1
1 Texas Instruments, Melbourne, FL
2 Texas Instruments, Dallas, TX
3 Massachusetts Institute of Technology, Cambridge, MA
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6.5 A 160μA Biopotential Acquisition ASIC with Fully Integrated IA and Motion-Artifact Suppression
N. Van Helleputte1, S. Kim1, H. Kim1, J. Kim2, C. Van Hoof 1,3, R. Yazicioglu1
1 imec, Heverlee, Belgium
2 Samsung Advanced Institute of Technology, Yongin, Korea
3 KU Leuven, Leuven, Belgium
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7.5 A 4.1pJ/b 16Gb/s Coded Differential Bidirectional Parallel Electrical Link
A. Amirkhany1, K. Kaviani1, A. Abbasfar1, F. Shuaeb2, W. Beyene1, C. Hoshino3, C. Madden1, K. Chang1, C. Yuan1
1 Rambus, Sunnyvale, CA
2 Rambus, Bangalore, India
3 Rambus, Tokyo, Japan
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10.3 A 1.45GHz 52-to-162GFLOPS/W Variable-Precision Floating-Point Fused Multiply-Add Unit with Certainty Tracking in 32nm CMOS
H. Kaul, M. Anders, S. Mathew, S. Hsu, A. Agarwal, F. Sheikh, R. Krishnamurthy, S. Borkar
Intel, Hillsboro, OR
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11.6 A Temperature-to-Digital Converter for a MEMS-Based Programmable Oscillator with Better Than ±0.5ppm Frequency Stability
M. Perrott1, J. Salvia2, F. Lee3, A. Partridge2, S. Mukherjee2, C. Arft2, J-T. Kim2, N. Arumugam2, P. Gupta2, S. Tabatabaei2, S. Pamarti4, H. Lee2, F. Assaderaghi2
1 Masdar Institute of Science and Technology, Abu Dhabi, United Arab Emirates
2 SiTime, Sunnyvale, CA
3 Fairchild Semiconductor, San Jose, CA
4 University of California, Los Angeles, Los Angeles, CA
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12.1 A 32nm High-k Metal Gate Application Processor with GHz Multi-Core CPU
S-H. Yang, S. Lee, J. Lee, J. Cho, H-J. Lee, D. Cho, J. Heo, S. Cho, Y. Shin, S. Yun, E. Kim, U. Cho, J. Son, C. Kim, J. Youn, Y. Chung, S. Park, S. Hwang
Samsung Electronics, Yongin, Korea
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12.5 A 464GOPS 620GOPS/W Heterogeneous Multi-Core SoC for Image-Recognition Applications
Y. Tanabe, M. Sumiyoshi, M. Nishiyama, I. Yamazaki, S. Fujii, K. Kimura, T. Aoyama, M. Banno, H. Hayashi, T. Miyamori
Toshiba, Kawasaki, Japan
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19.3 A 40nm CMOS Single-Chip 50Gb/s DP-QPSK/BPSK Transceiver with Electronic Dispersion Compensation for Coherent Optical Channels
D. Crivelli 1,2, M. Hueda1,2, H. Carrer1,2, J. Zachan3, V. Gutnik3, M. Del Barco1, R. Lopez1, G. Hatcher3, J. Finochietto2, M. Yeo3, A. Chartrand3, N. Swenson3, P. Voois3, O. Agazzi1,3
1 ClariPhy, Cordoba, Argentina
2 National University of Cordoba, Cordoba, Argentina
3 ClariPhy, Irvine, CA
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22.9 A 1920×1080 3.65μm-Pixel 2D/3D Image Sensor with Split and Binning Pixel Structure in 0.11μm Standard CMOS
S-J. Kim, B. Kang, J. Kim, K. Lee, C-Y. Kim, Kinam Kim
Samsung Advanced Institute of Technology, Yongin, Korea
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26.6 A Meter-Range UWB Transceiver Chipset for Around-the-Head Audio Streaming
X. Wang1, Y. Yu2, B. Busze1, H. Pflug1, A. Young1, X. Huang1, C. Zhou1, M. Konijnenburg1, K. Philips1, H. De Groot1
1 imec - Holst Centre, Eindhoven, The Netherlands
2 NXP Semiconductors, Eindhoven, The Netherlands
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26.8 A 915MHz 120µW-RX/900µW-TX Envelope-Detection Transceiver with 20dB In-Band Interference Tolerance
X. Huang1, A. Ba1,2, P. Harpe1,3, G. Dolmans1, H. De Groot1, J. Long2
1 imec - Holst Centre, Eindhoven, The Netherlands
2 Delft University of Technology, Delft, The Netherlands
3 Eindhoven University of Technology, Eindhoven, The Netherlands
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The Academic Demonstration Session (ADS) featured live demonstrations of selected ICs presented by academics in regular paper sessions. The ADS is intended to demonstrate real-life applications made possible by new ICs presented this year
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6.8 A Wireless Magnetoresistive Sensing System for an Intra-Oral Tongue-Computer Interface
H. Park1, B. Gosselin2, M. Kiani1, H-M. Lee1, J. Kim1, X. Huo1, M. Ghovanloo1
1 Georgia Institute of Technology, Atlanta, GA
2 Laval University, Quebec, QC, Canada
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10.6 3D-MAPS: 3D Massively Parallel Processor with Stacked Memory
D. Kim1, K. Athikulwongse1, M. Healy1, M. Hossain1, M. Jung1, I. Khorosh1, G. Kumar1, Y-J. Lee1, D. Lewis1, T-W. Lin1, C. Liu1, S. Panth1, M. Pathak1, M. Ren1, G. Shen1, T. Song1, D. Woo1, X. Zhao1, J. Kim2, H. Choi3, G. Loh1, H-H. Lee1, S. Lim1
1 Georgia Institute of Technology, Atlanta, GA
2 KAIST, Daejeon, Korea
3 Amkor Technology, Seoul, Korea
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11.5 A ±0.4°C (3σ) -70 to 200°C Time-Domain Temperature Sensor Based on Heat Diffusion in Si and SiO2
C. Van Vroonhoven1, D. D’Aquino2, K. Makinwa1
1 Delft University of Technology, Delft, The Netherlands
2 National Semiconductor, Santa Clara, CA
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12.4 A 320mW 342GOPS Real-Time Moving Object Recognition Processor for HD 720p Video Streams
J. Oh, G. Kim, J. Park, I. Hong, S. Lee, H-J. Yoo
KAIST, Daejeon, Korea
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15.1 A 1kPixel CMOS Camera Chip for 25fps Real-TimeTerahertz Imaging Applications
H. Sherry1,2,3, J. Grzyb2, Y. Zhao2, R. Al Hadi2, A. Cathelin1, A. Kaiser3, U. Pfeiffer2
1 STMicroelectronics, Crolles, France
2 University of Wuppertal, Wuppertal, Germany
3 IEMN / ISEN, Lille, France
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16.8 Voltage-Boosting Wireless Power Delivery System with Fast Load Tracker by ΔΣ-Modulated Sub-Harmonic Resonant Switching
R. Shinoda, K. Tomita, Y. Hasegawa, H. Ishikuro
Keio University, Yokohama, Japan
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17.2 A 259.6μW Nonlinear HRV-EEG Chaos Processor with Body Channel Communication Interface for Mental Health Monitoring
T. Roh, S. Hong, H. Cho, H-J. Yoo
KAIST, Daejeon, Korea
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17.3 A Sub-10nA DC-Balanced Adaptive Stimulator IC with Multimodal Sensor for Compact Electro-Acupuncture System
K. Song, H. Lee, S. Hong, H. Cho, H-J. Yoo
KAIST, Daejeon, Korea
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22.2 A Global-Shutter CMOS Image Sensor with Readout Speed of 1Tpixel/s Burst and 780Mpixel/s Continuous
Y. Tochigi1, K. Hanzawa1, Y. Kato1, R. Kuroda1, H. Mutoh2, R. Hirose3, H. Tominaga3, K. Takubo3, Y. Kondo3, S. Sugawa1
1 Tohoku University, Sendai, Japan
2 Link Research, Odawara, Japan
3 Shimadzu, Kyoto, Japan
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25.2 Over-10×-Extended-Lifetime 76%-Reduced-Error Solid-State Drives (SSDs) with Error-Prediction LDPC Architecture and Error-Recovery Scheme
S. Tanakamaru, Y. Yanagihara, K. Takeuchi
University of Tokyo, Tokyo, Japan
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26.4 An Interference-Aware 5.8GHz Wake-Up Radio for ETCS
J. Choi1, K. Lee2, S-O. Yun2, S-G. Lee1, J. Ko2
1 KAIST, Daejeon, Korea
2 PHYCHIPS, Daejeon, Korea
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